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- شبه الموصل المُشَاب (بالإنجليزية: Extrinsic semiconductor) هو شبه موصل تحول من كونه شبه موصل ذاتي إلى مشاب بعد إجراء عملية إشابة غيرت من خصائصه الإلكترونية. تؤدي الإشابة (إضافة مادة أخرى) إلى اختلاف تركيز الإلكترونات والفجوات في شبه الموصل عند التوازن الحراري. وبحسب المواصفات المطلوبة لشبه الموصل الناتج يتم اختيار المُشِيب ومقدار الإشابة. وتنقسم أشباه الموصلات الخارجية بحسب مادتها والمشيب إلى:
* شبه موصل سالب.
* شبه موصل موجب. (ar)
- An extrinsic semiconductor is one that has been doped; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an intrinsic semiconductor. In an extrinsic semiconductor it is these foreign dopant atoms in the crystal lattice that mainly provide the charge carriers which carry electric current through the crystal. The doping agents used are of two types, resulting in two types of extrinsic semiconductor. An electron donor dopant is an atom which, when incorporated in the crystal, releases a mobile conduction electron into the crystal lattice. An extrinsic semiconductor which has been doped with electron donor atoms is called an n-type semiconductor, because the majority of charge carriers in the crystal are negative electrons. An electron acceptor dopant is an atom which accepts an electron from the lattice, creating a vacancy where an electron should be called a hole which can move through the crystal like a positively charged particle. An extrinsic semiconductor which has been doped with electron acceptor atoms is called a p-type semiconductor, because the majority of charge carriers in the crystal are positive holes. Doping is the key to the extraordinarily wide range of electrical behavior that semiconductors can exhibit, and extrinsic semiconductors are used to make semiconductor electronic devices such as diodes, transistors, integrated circuits, semiconductor lasers, LEDs, and photovoltaic cells. Sophisticated semiconductor fabrication processes like photolithography can implant different dopant elements in different regions of the same semiconductor crystal wafer, creating semiconductor devices on the wafer's surface. For example a common type of transistor, the n-p-n bipolar transistor, consists of an extrinsic semiconductor crystal with two regions of n-type semiconductor, separated by a region of p-type semiconductor, with metal contacts attached to each part. (en)
- 불순물반도체는 반도체의 한 종류이다. 비고유 반도체 또는 외인성 반도체(extrinsic semiconductor)라고도 한다. 순수한 진성반도체에 불순물를 소량첨가 (도핑)한 것이다. 도핑하는 원소에 의하여 캐리어가 홀인 P형 반도체, 캐리어가 전자인 N형 반도체를 얻을 수 있다. 캐리어의 종류는 불순물 원소의 최외각전자수에 의존적이며, 최외각전자가 4보다 클 경우는 N형 반도체, 최외각전자가 4보다 작을 경우는 P형 반도체가 된다. 반도체의 한종류인 규소를 예로 들면, 비소, 인의 경우에는 N형 반도체, 붕소의 경우에는 P형 반도체가 된다. (ko)
- 不純物半導体（ふじゅんぶつはんどうたい）または外因性半導体（がいいんせいはんどうたい）とは、純粋な真性半導体に不純物（ドーパント）を微量添加（ドーピング）した半導体のこと。ドーピングする元素により、キャリアがホール（正孔）のP型半導体と、キャリアが電子のN型半導体に分類される。 N型とP型のどちらになるかは、不純物元素の原子価、その不純物によって置換される半導体の原子価によって決まる。例えば原子価が4であるケイ素にドーピングする場合、原子価が5であるヒ素やリンをドーピングした場合がN型半導体、原子価が3であるホウ素やアルミニウムをドーピングした場合がP型半導体になる。 (ja)
- 杂质半导体（英語：extrinsic semiconductor）又称外质半导体、非本征半导体，是掺杂了杂质的半导体，即在本征半导体中加入掺杂物，使得其电学性质较无杂质半导体发生了改变，其电荷载流子浓度取决于杂质或其他缺陷。 杂质半导体一般分为含n型或p型的杂质，在一定条件下（例如加热），可迫使其标准状态产生新的或，分别称为n型半导体与p型半导体。 (zh)
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- شبه الموصل المُشَاب (بالإنجليزية: Extrinsic semiconductor) هو شبه موصل تحول من كونه شبه موصل ذاتي إلى مشاب بعد إجراء عملية إشابة غيرت من خصائصه الإلكترونية. تؤدي الإشابة (إضافة مادة أخرى) إلى اختلاف تركيز الإلكترونات والفجوات في شبه الموصل عند التوازن الحراري. وبحسب المواصفات المطلوبة لشبه الموصل الناتج يتم اختيار المُشِيب ومقدار الإشابة. وتنقسم أشباه الموصلات الخارجية بحسب مادتها والمشيب إلى:
* شبه موصل سالب.
* شبه موصل موجب. (ar)
- 불순물반도체는 반도체의 한 종류이다. 비고유 반도체 또는 외인성 반도체(extrinsic semiconductor)라고도 한다. 순수한 진성반도체에 불순물를 소량첨가 (도핑)한 것이다. 도핑하는 원소에 의하여 캐리어가 홀인 P형 반도체, 캐리어가 전자인 N형 반도체를 얻을 수 있다. 캐리어의 종류는 불순물 원소의 최외각전자수에 의존적이며, 최외각전자가 4보다 클 경우는 N형 반도체, 최외각전자가 4보다 작을 경우는 P형 반도체가 된다. 반도체의 한종류인 규소를 예로 들면, 비소, 인의 경우에는 N형 반도체, 붕소의 경우에는 P형 반도체가 된다. (ko)
- 不純物半導体（ふじゅんぶつはんどうたい）または外因性半導体（がいいんせいはんどうたい）とは、純粋な真性半導体に不純物（ドーパント）を微量添加（ドーピング）した半導体のこと。ドーピングする元素により、キャリアがホール（正孔）のP型半導体と、キャリアが電子のN型半導体に分類される。 N型とP型のどちらになるかは、不純物元素の原子価、その不純物によって置換される半導体の原子価によって決まる。例えば原子価が4であるケイ素にドーピングする場合、原子価が5であるヒ素やリンをドーピングした場合がN型半導体、原子価が3であるホウ素やアルミニウムをドーピングした場合がP型半導体になる。 (ja)
- 杂质半导体（英語：extrinsic semiconductor）又称外质半导体、非本征半导体，是掺杂了杂质的半导体，即在本征半导体中加入掺杂物，使得其电学性质较无杂质半导体发生了改变，其电荷载流子浓度取决于杂质或其他缺陷。 杂质半导体一般分为含n型或p型的杂质，在一定条件下（例如加热），可迫使其标准状态产生新的或，分别称为n型半导体与p型半导体。 (zh)
- An extrinsic semiconductor is one that has been doped; during manufacture of the semiconductor crystal a trace element or chemical called a doping agent has been incorporated chemically into the crystal, for the purpose of giving it different electrical properties than the pure semiconductor crystal, which is called an intrinsic semiconductor. In an extrinsic semiconductor it is these foreign dopant atoms in the crystal lattice that mainly provide the charge carriers which carry electric current through the crystal. The doping agents used are of two types, resulting in two types of extrinsic semiconductor. An electron donor dopant is an atom which, when incorporated in the crystal, releases a mobile conduction electron into the crystal lattice. An extrinsic semiconductor which has been do (en)
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- شبه موصل مشاب (ar)
- Semiconductor extrínsec (ca)
- Extrinsic semiconductor (en)
- 불순물 반도체 (ko)
- 不純物半導体 (ja)
- 杂质半导体 (zh)
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